This work aims to characterize aluminum oxide obtained through the
anodization technique of aluminum using a 0.4 M phosphoric acid solution.
Different voltage and time values were applied during the anodization process.
For the characterization of aluminum oxide, UV-VIS, FTIR, and four-point probe
measurements were performed. Additionally, a device was constructed to
perform exploratory I-V (current-voltage) measurements.
The main focus of this study is to explore the application of this aluminum oxide
layer in organic electronic devices. Through a detailed characterization of the
properties of aluminum oxide, the aim is to understand its potential to enhance
the performance and stability of these devices. The results obtained from these
measurements will provide valuable information for the development of future
practical applications of organic electronic devices using aluminum oxide as a
functional layer.