The present work presents an experimental study on the organic memory
device with aluminum (Al)/Poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene
vinylene) (MEH-PPV)/ architecture. Indium Tin Oxide (ITO), carried out using
electrical characterization techniques in direct current (DC) regime. The
measurements were carried out at room temperature and under temperature
variation, with the aim of understanding and explaining more clearly the
switching mechanisms presented by the device. Measurements carried out at
room temperature show that the device needs to go through the electroforming
process to present resistive switching, presenting two resistive states, which are
induced to switch through electrical pulses. The results presented in the
literature suggest the growth of a thin Al 2 O 3 at the Al/MEH-PPV interface during
device preparation, and the ITO electrode will function as a source of oxygen
vacancies for the formation of conductive filaments, responsible for dominating
the process conduction, generating resistive switching. Analyzes carried out
using the QPC model suggest that conduction is carried out through conductive
filaments, with the presence of a potential barrier with a height of 1.51eV, which
the charge carriers tunnel along. The results obtained under temperature
variation regime confirm the tunneling through the potential barrier, when the
device is already memory. The QPC model shows us that as the device cools,
the potential barrier decreases in height and increases in the width.